JAN1N5556
vs
JANTXV1N5556
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
SENSITRON SEMICONDUCTOR
SENSITRON SEMICONDUCTOR
Reach Compliance Code
compliant
compliant
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Min
43.7 V
43.7 V
Case Connection
CATHODE
CATHODE
Clamping Voltage-Max
63.5 V
63.5 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-13
DO-13
JESD-30 Code
O-XALF-W2
O-XALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Reference Standard
MIL-19500
MIL-19500
Rep Pk Reverse Voltage-Max
40.3 V
40.3 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Factory Lead Time
26 Weeks
Compare JAN1N5556 with alternatives
Compare JANTXV1N5556 with alternatives