JAN1N5556 vs 1N5556 feature comparison

JAN1N5556 Sensitron Semiconductors

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1N5556 Semitronics Corp

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer SENSITRON SEMICONDUCTOR SEMITRONICS CORP
Reach Compliance Code compliant unknown
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 43.7 V 43.7 V
Case Connection CATHODE ISOLATED
Clamping Voltage-Max 63.5 V 63.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-13
JESD-30 Code O-XALF-W2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 40.3 V 40.3 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Rohs Code No
Part Package Code DO-13
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 44 V
JESD-609 Code e0
Qualification Status Not Qualified
Terminal Finish Tin/Lead (Sn/Pb)

Compare JAN1N5556 with alternatives

Compare 1N5556 with alternatives