JAN1N5461B
vs
JANTXV1N5461B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
KNOX SEMICONDUCTORS INC
KNOX SEMICONDUCTORS INC
Part Package Code
DO-7
DO-7
Package Description
O-LALF-W2
O-LALF-W2
Pin Count
2
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
30 V
30 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Cap Tolerance
5%
5%
Diode Capacitance Ratio-Min
2.7
2.7
Diode Capacitance-Nom
6.8 pF
6.8 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
JEDEC-95 Code
DO-7
DO-7
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.4 W
0.4 W
Qualification Status
Not Qualified
Not Qualified
Quality Factor-Min
600
600
Reference Standard
MIL
MIL
Rep Pk Reverse Voltage-Max
30 V
30 V
Reverse Current-Max
2e-8 µA
2e-8 µA
Reverse Test Voltage
25 V
25 V
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Variable Capacitance Diode Classification
ABRUPT
ABRUPT
Base Number Matches
1
1
Compare JAN1N5461B with alternatives
Compare JANTXV1N5461B with alternatives