JAN1N5420
vs
1N5420
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
GENERAL INSTRUMENT CORP
GENERAL INSTRUMENT CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Application
EFFICIENCY
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Pk Forward Current-Max
80 A
80 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Output Current-Max
3 A
3 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/411
Rep Pk Reverse Voltage-Max
600 V
600 V
Reverse Recovery Time-Max
0.4 µs
0.4 µs
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
3
Additional Feature
PATENTED DEVICE
Forward Voltage-Max (VF)
1.5 V
Reverse Current-Max
1 µA
Compare JAN1N5420 with alternatives
Compare 1N5420 with alternatives