JAN1N5313
vs
1N5313TR
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MOTOROLA INC
|
CENTRAL SEMICONDUCTOR CORP
|
| Package Description |
O-LALF-W2
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
CURRENT REGULATOR DIODE
|
CURRENT REGULATOR DIODE
|
| JEDEC-95 Code |
DO-204AA
|
DO-35
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| Knee Impedance-Max |
14000 Ω
|
|
| Limiting Voltage-Max |
2.75 V
|
2.75 V
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Operating Temperature-Min |
-55 °C
|
-65 °C
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.6 W
|
0.6 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Regulation Current-Nom (Ireg) |
4.3 mA
|
4.3 mA
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
FIELD EFFECT
|
FIELD EFFECT
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
6
|
1
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Part Package Code |
|
DO-35
|
| Pin Count |
|
2
|
| Additional Feature |
|
HIGH RELIABILITY
|
| JESD-609 Code |
|
e0
|
| Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare JAN1N5313 with alternatives
Compare 1N5313TR with alternatives