JAN1N5306-1
vs
1N5306-1E3
feature comparison
Pbfree Code |
No
|
Yes
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
Package Description |
DO-35, 2 PIN
|
O-LALF-W2
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.70
|
8541.10.00.70
|
Additional Feature |
METALLURGICALLY BONDED
|
METALLURGICALLY BONDED, HIGH SOURCE IMPEDANCE
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
CURRENT REGULATOR DIODE
|
CURRENT REGULATOR DIODE
|
JEDEC-95 Code |
DO-35
|
DO-7
|
JESD-30 Code |
O-XALF-W2
|
O-LALF-W2
|
JESD-609 Code |
e0
|
|
Limiting Voltage-Max |
1.95 V
|
1.95 V
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
UNSPECIFIED
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Power Dissipation-Max |
0.5 W
|
0.5 W
|
Qualification Status |
Not Qualified
|
|
Reference Standard |
MIL-19500/463
|
|
Regulation Current-Nom (Ireg) |
2.2 mA
|
2.2 mA
|
Surface Mount |
NO
|
NO
|
Technology |
FIELD EFFECT
|
FIELD EFFECT
|
Terminal Finish |
TIN LEAD
|
PURE MATTE TIN
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
9
|
1
|
Part Package Code |
|
DO-7
|
Pin Count |
|
2
|
Dynamic Impedance-Min |
|
370000 Ω
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-65 °C
|
Rep Pk Reverse Voltage-Max |
|
100 V
|
|
|
|
Compare JAN1N5306-1 with alternatives
Compare 1N5306-1E3 with alternatives