JAN1N5190
vs
1N5190X
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
SENSITRON SEMICONDUCTOR
|
Package Description |
HERMETIC SEALED, 303, 2 PIN
|
O-XALF-W2
|
Pin Count |
2
|
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Application |
FAST RECOVERY
|
FAST RECOVERY
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
Forward Voltage-Max (VF) |
1.1 V
|
1.5 V
|
JESD-30 Code |
O-LALF-W2
|
O-XALF-W2
|
JESD-609 Code |
e0
|
|
Non-rep Pk Forward Current-Max |
80 A
|
80 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
200 °C
|
175 °C
|
Output Current-Max |
2.5 A
|
2.5 A
|
Package Body Material |
GLASS
|
UNSPECIFIED
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL
|
|
Rep Pk Reverse Voltage-Max |
600 V
|
|
Reverse Recovery Time-Max |
0.4 µs
|
0.4 µs
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
5
|
3
|
Operating Temperature-Min |
|
-65 °C
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Reverse Current-Max |
|
2 µA
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare JAN1N5190 with alternatives
Compare 1N5190X with alternatives