JAN1N5190
vs
1N5190E3
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
SENSITRON SEMICONDUCTOR
|
MICROSEMI CORP
|
| Package Description |
HERMETIC SEALED, 303, 2 PIN
|
O-LALF-W2
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Application |
FAST RECOVERY
|
FAST RECOVERY
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.1 V
|
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Pk Forward Current-Max |
80 A
|
80 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
175 °C
|
| Output Current-Max |
2.5 A
|
3 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL
|
|
| Rep Pk Reverse Voltage-Max |
600 V
|
600 V
|
| Reverse Recovery Time-Max |
0.4 µs
|
0.4 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN OVER COPPER
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
5
|
1
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Operating Temperature-Min |
|
-65 °C
|
| Technology |
|
AVALANCHE
|
|
|
|
Compare JAN1N5190 with alternatives
Compare 1N5190E3 with alternatives