JAN1N4947
vs
1N4947
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Package Description |
E-LALF-W2
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Additional Feature |
HIGH RELIABILITY, METALLURGICALLY BONDED
|
|
| Application |
GENERAL PURPOSE
|
|
| Case Connection |
ISOLATED
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
E-LALF-W2
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
|
| Package Shape |
ELLIPTICAL
|
|
| Package Style |
LONG FORM
|
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-19500
|
|
| Rep Pk Reverse Voltage-Max |
800 V
|
800 V
|
| Reverse Recovery Time-Max |
5 µs
|
0.25 µs
|
| Surface Mount |
NO
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
AXIAL
|
|
| Base Number Matches |
5
|
48
|
| Operating Temperature-Max |
|
200 °C
|
| Operating Temperature-Min |
|
-65 °C
|
|
|
|
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