JAN1N4153
vs
JANTXV1N4153-1
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
HERMETIC SEALED, GLASS PACKAGE-2
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.70
|
|
| Additional Feature |
METALLURGICALLY BONDED
|
METALLURGICALLY BONDED
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-35
|
DO-35
|
| JESD-30 Code |
O-LALF-W2
|
O-LALF-W2
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
0.15 A
|
0.2 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Reference Standard |
MIL-19500/337
|
MIL-PRF-19500
|
| Reverse Recovery Time-Max |
0.004 µs
|
0.004 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
6
|
1
|
| Breakdown Voltage-Min |
|
100 V
|
| Forward Voltage-Max (VF) |
|
0.88 V
|
| Non-rep Pk Forward Current-Max |
|
2 A
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Rep Pk Reverse Voltage-Max |
|
75 V
|
| Reverse Current-Max |
|
0.05 µA
|
| Reverse Test Voltage |
|
50 V
|
|
|
|
Compare JAN1N4153 with alternatives
Compare JANTXV1N4153-1 with alternatives