JAN1N4101-1
vs
1N4101-PBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
VPT COMPONENTS
DIGITRON SEMICONDUCTORS
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW NOISE, METALLURGICALLY BONDED
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
Dynamic Impedance-Max
200 Ω
200 Ω
JEDEC-95 Code
DO-35
DO-35
JESD-30 Code
O-LALF-W2
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
200 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.5 W
0.5 W
Qualification Status
Qualified
Reference Standard
MIL-19500
Reference Voltage-Nom
8.2 V
8.2 V
Reverse Current-Max
0.5 µA
1 µA
Reverse Test Voltage
6.3 V
6.24 V
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Voltage Tol-Max
5%
5%
Working Test Current
0.25 mA
0.25 mA
Base Number Matches
11
1
Package Description
O-XALF-W2
Forward Voltage-Max (VF)
1.1 V
Voltage Temp Coeff-Max
5.74 mV/°C
Compare JAN1N4101-1 with alternatives
Compare 1N4101-PBF with alternatives