JAN1N3825DUR-1
vs
1N3825DUR-1E3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
VPT COMPONENTS
|
MICROSEMI CORP
|
| Package Description |
MELF-2
|
O-LELF-R2
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Date Of Intro |
2019-09-27
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JEDEC-95 Code |
DO-213AB
|
DO-213AB
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1 W
|
1.25 W
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500
|
|
| Reference Voltage-Nom |
4.7 V
|
4.7 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Voltage Tol-Max |
1%
|
1%
|
| Working Test Current |
53 mA
|
53 mA
|
| Base Number Matches |
5
|
1
|
| Pbfree Code |
|
Yes
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
DO-213AB
|
| Pin Count |
|
2
|
| Additional Feature |
|
METALLURGICALLY BONDED, HIGH RELIABILITY
|
| Dynamic Impedance-Max |
|
8 Ω
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Max |
|
175 °C
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare JAN1N3825DUR-1 with alternatives
Compare 1N3825DUR-1E3 with alternatives