JAN1N3064 vs 1N3064HG feature comparison

JAN1N3064 TDK Micronas GmbH

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1N3064HG ROHM Semiconductor

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ITT SEMICONDUCTOR ROHM CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature HIGH RELIABILITY
Application GENERAL PURPOSE GENERAL PURPOSE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 0.075 A 0.15 A
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Qualification Status Not Qualified Not Qualified
Reverse Recovery Time-Max 0.004 µs 0.002 µs
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 11 1
Package Description O-LALF-W2
Forward Voltage-Max (VF) 1 V
Non-rep Pk Forward Current-Max 2 A
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Power Dissipation-Max 0.5 W
Rep Pk Reverse Voltage-Max 75 V
Reverse Current-Max 0.1 µA

Compare JAN1N3064 with alternatives

Compare 1N3064HG with alternatives