JAN1N3039B-1 vs BZV85-C62,133 feature comparison

JAN1N3039B-1 Cobham Semiconductor Solutions

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BZV85-C62,133 NXP Semiconductors

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer AEROFLEX/METELICS INC NXP SEMICONDUCTORS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-XALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified
Reference Voltage-Nom 62 V 62 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 4 mA 4 mA
Base Number Matches 8 2
Rohs Code Yes
Part Package Code DO-4
Package Description ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
Manufacturer Package Code SOD66
Factory Lead Time 4 Weeks
Dynamic Impedance-Max 175 Ω
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 200 °C
Peak Reflow Temperature (Cel) 260
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

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