JAN1N3017BUR-1
vs
1N4737A,113
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
NXP SEMICONDUCTORS
Part Package Code
DO-213AB
DO-4
Package Description
DO-213AB, 2 PIN
DO-41, 2 PIN
Pin Count
2
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
METALLURGICALLY BONDED
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JEDEC-95 Code
DO-213AB
DO-41
JESD-30 Code
O-LELF-R2
O-XALF-W2
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/115K
Reference Voltage-Nom
7.5 V
7.5 V
Surface Mount
YES
NO
Technology
ZENER
ZENER
Terminal Finish
TIN LEAD
TIN
Terminal Form
WRAP AROUND
WIRE
Terminal Position
END
AXIAL
Voltage Tol-Max
5%
5%
Working Test Current
34 mA
34 mA
Base Number Matches
8
2
Manufacturer Package Code
SOD66
Factory Lead Time
4 Weeks
Dynamic Impedance-Max
4 Ω
Knee Impedance-Max
700 Ω
Operating Temperature-Max
200 °C
Operating Temperature-Min
-65 °C
Peak Reflow Temperature (Cel)
260
Reverse Current-Max
10 µA
Time@Peak Reflow Temperature-Max (s)
30
Compare JAN1N3017BUR-1 with alternatives
Compare 1N4737A,113 with alternatives