IXTU01N100D
vs
IXTY01N100D
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
IXYS CORP
|
IXYS CORP
|
Part Package Code |
TO-251AA
|
TO-252AA
|
Package Description |
TO-251AA, 3 PIN
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
3
|
4
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
1000 V
|
1000 V
|
Drain Current-Max (ID) |
0.1 A
|
0.1 A
|
Drain-source On Resistance-Max |
110 Ω
|
110 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-251AA
|
TO-252AA
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
25 W
|
25 W
|
Pulsed Drain Current-Max (IDM) |
0.4 A
|
0.4 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
10
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare IXTU01N100D with alternatives
Compare IXTY01N100D with alternatives