IXTT60N20L2
vs
IRHNA54260PBF
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
IXYS CORP
INFINEON TECHNOLOGIES AG
Part Package Code
TO-268AA
Package Description
PLASTIC, TO-268, 3 PIN
CHIP CARRIER, R-CBCC-N3
Pin Count
4
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
2000 mJ
380 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
60 A
55 A
Drain-source On Resistance-Max
0.045 Ω
0.043 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-268AA
JESD-30 Code
R-PSSO-G2
R-CBCC-N3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
CHIP CARRIER
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
540 W
Pulsed Drain Current-Max (IDM)
150 A
220 A
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
NO LEAD
Terminal Position
SINGLE
BOTTOM
Time@Peak Reflow Temperature-Max (s)
10
NOT SPECIFIED
Transistor Application
AMPLIFIER
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Compare IXTT60N20L2 with alternatives
Compare IRHNA54260PBF with alternatives