IXTT28N50Q vs APT6030BVRG feature comparison

IXTT28N50Q IXYS Corporation

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APT6030BVRG Microchip Technology Inc

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer IXYS CORP MICROCHIP TECHNOLOGY INC
Part Package Code TO-268AA
Package Description SMALL OUTLINE, R-PSSO-G2 TO-247, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 1500 mJ 1300 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 600 V
Drain Current-Max (ID) 28 A 21 A
Drain-source On Resistance-Max 0.2 Ω 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-268AA TO-247AD
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e1
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 112 A 84 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish MATTE TIN TIN SILVER COPPER
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Factory Lead Time 26 Weeks
Power Dissipation-Max (Abs) 300 W

Compare IXTT28N50Q with alternatives

Compare APT6030BVRG with alternatives