IXTT28N50Q
vs
APT6030BVRG
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
IXYS CORP
MICROCHIP TECHNOLOGY INC
Part Package Code
TO-268AA
Package Description
SMALL OUTLINE, R-PSSO-G2
TO-247, 3 PIN
Pin Count
4
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1500 mJ
1300 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
600 V
Drain Current-Max (ID)
28 A
21 A
Drain-source On Resistance-Max
0.2 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-268AA
TO-247AD
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e3
e1
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
112 A
84 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
MATTE TIN
TIN SILVER COPPER
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Factory Lead Time
26 Weeks
Power Dissipation-Max (Abs)
300 W
Compare IXTT28N50Q with alternatives
Compare APT6030BVRG with alternatives