IXTT22N60P
vs
IXTV26N60P
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
IXYS CORP
IXYS CORP
Part Package Code
TO-268AA
Package Description
TO-268, 3 PIN
PLUS220, 3 PIN
Pin Count
4
3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
1000 mJ
1200 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
22 A
26 A
Drain-source On Resistance-Max
0.33 Ω
0.27 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-268AA
JESD-30 Code
R-PSSO-G2
R-PSIP-T3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
66 A
65 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
PURE TIN
TIN SILVER COPPER
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Additional Feature
AVALANCHE RATED
JESD-609 Code
e1
Compare IXTT22N60P with alternatives
Compare IXTV26N60P with alternatives