IXTT10N100D2 vs APT9F100B feature comparison

IXTT10N100D2 IXYS Corporation

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APT9F100B Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer IXYS CORP MICROSEMI CORP
Part Package Code TO-268AA TO-247AD
Package Description TO-268, 3 PIN TO-247, 3 PIN
Pin Count 4 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V 1000 V
Drain Current-Max (ID) 10 A 9 A
Drain-source On Resistance-Max 1.5 Ω 1.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-268AA TO-247AD
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e1
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 695 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) TIN SILVER COPPER
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Pbfree Code Yes
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 574 mJ
Pulsed Drain Current-Max (IDM) 37 A

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