IXTQ86N20T
vs
IXFX80N20Q
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
LITTELFUSE INC
IXYS CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
LITTELFUSE
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1000 mJ
1500 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
86 A
80 A
Drain-source On Resistance-Max
0.033 Ω
0.028 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
73 pF
JESD-30 Code
R-PSFM-T3
R-PSIP-T3
JESD-609 Code
e3
e1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
550 W
Pulsed Drain Current-Max (IDM)
260 A
320 A
Surface Mount
NO
NO
Terminal Finish
Matte Tin (Sn)
TIN SILVER COPPER
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Package Description
PLUS247-3
Pin Count
3
Qualification Status
Not Qualified
Compare IXTQ86N20T with alternatives
Compare IXFX80N20Q with alternatives