IXTP48N20T
vs
SFF50N20/3
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
LITTELFUSE INC
|
SOLID STATE DEVICES INC
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
LITTELFUSE
|
|
Additional Feature |
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas) |
500 mJ
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
48 A
|
50 A
|
Drain-source On Resistance-Max |
0.05 Ω
|
0.05 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
40 pF
|
|
JEDEC-95 Code |
TO-220AB
|
TO-3
|
JESD-30 Code |
R-PSFM-T3
|
O-MBFM-P2
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
METAL
|
Package Shape |
RECTANGULAR
|
ROUND
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
250 W
|
|
Pulsed Drain Current-Max (IDM) |
130 A
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Matte Tin (Sn)
|
|
Terminal Form |
THROUGH-HOLE
|
PIN/PEG
|
Terminal Position |
SINGLE
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Package Description |
|
FLANGE MOUNT, O-MBFM-P2
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare IXTP48N20T with alternatives
Compare SFF50N20/3 with alternatives