IXTI10N60P
vs
MTP10N60E7
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
IXYS CORP
|
ON SEMICONDUCTOR
|
Part Package Code |
D2PAK
|
|
Package Description |
TO-263, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
4
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
ULTRA-LOW RESISTANCE
|
Avalanche Energy Rating (Eas) |
500 mJ
|
400 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
10 A
|
10 A
|
Drain-source On Resistance-Max |
0.74 Ω
|
0.75 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-263
|
TO-220AB
|
JESD-30 Code |
R-PSIP-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
30 A
|
35 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Power Dissipation-Max (Abs) |
|
201 W
|
|
|
|
Compare IXTI10N60P with alternatives
Compare MTP10N60E7 with alternatives