IXTI10N60P
vs
MTP10N60E7
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
LITTELFUSE INC
ON SEMICONDUCTOR
Package Description
IN-LINE, R-PSIP-T3
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
500 mJ
400 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
10 A
10 A
Drain-source On Resistance-Max
0.74 Ω
0.75 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263
TO-220AB
JESD-30 Code
R-PSIP-T3
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
30 A
35 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Power Dissipation-Max (Abs)
201 W
Compare IXTI10N60P with alternatives
Compare MTP10N60E7 with alternatives