IXTH180N10T
vs
IXTA180N10T7
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
LITTELFUSE INC
LITTELFUSE INC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
LITTELFUSE
LITTELFUSE
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
AVALANCHE RATED
Avalanche Energy Rating (Eas)
750 mJ
750 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
180 A
180 A
Drain-source On Resistance-Max
0.0064 Ω
0.0064 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
162 pF
162 pF
JEDEC-95 Code
TO-247AD
TO-263
JESD-30 Code
R-PSFM-T3
R-PSSO-G6
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
3
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
480 W
480 W
Pulsed Drain Current-Max (IDM)
450 A
450 A
Surface Mount
NO
YES
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn)
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Package Description
,
Moisture Sensitivity Level
1
Compare IXTH180N10T with alternatives
Compare IXTA180N10T7 with alternatives