IXTH14N80
vs
STH8NA80FI
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
LITTELFUSE INC
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
LITTELFUSE
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
800 V
|
800 V
|
| Drain Current-Max (ID) |
14 A
|
4.5 A
|
| Drain-source On Resistance-Max |
0.7 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
65 pF
|
|
| JEDEC-95 Code |
TO-247AD
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
300 W
|
|
| Pulsed Drain Current-Max (IDM) |
56 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
150 ns
|
|
| Turn-on Time-Max (ton) |
100 ns
|
|
| Base Number Matches |
2
|
2
|
|
|
|
Compare IXTH14N80 with alternatives