IXTA52P10P
vs
IRF5210-029
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
LITTELFUSE INC
INFINEON TECHNOLOGIES AG
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
LITTELFUSE
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1000 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
52 A
35 A
Drain-source On Resistance-Max
0.05 Ω
0.06 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
275 pF
JEDEC-95 Code
TO-263AA
TO-220AB
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
300 W
Pulsed Drain Current-Max (IDM)
130 A
Surface Mount
YES
NO
Terminal Finish
Matte Tin (Sn)
MATTE TIN OVER NICKEL
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Qualification Status
Not Qualified
Compare IXTA52P10P with alternatives
Compare IRF5210-029 with alternatives