IXTA10N60P
vs
MTB10N60E7T4
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
IXYS CORP
ON SEMICONDUCTOR
Part Package Code
D2PAK
Package Description
TO-263, 3 PIN
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
500 mJ
400 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
10 A
10 A
Drain-source On Resistance-Max
0.74 Ω
0.75 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
200 W
201 W
Pulsed Drain Current-Max (IDM)
30 A
35 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Compare IXTA10N60P with alternatives
Compare MTB10N60E7T4 with alternatives