IXTA05N100
vs
IXTA05N100HVTRL
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
LITTELFUSE INC
IXYS CORP
Package Description
,
TO-263, 2 PIN
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
LITTELFUSE
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
100 mJ
100 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1000 V
1000 V
Drain Current-Max (ID)
0.75 A
0.75 A
Drain-source On Resistance-Max
17 Ω
17 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
8 pF
JEDEC-95 Code
TO-263AA
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
40 W
40 W
Pulsed Drain Current-Max (IDM)
3 A
3 A
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
1
Rohs Code
Yes
Part Package Code
D2PAK
Pin Count
4
Compare IXTA05N100 with alternatives
Compare IXTA05N100HVTRL with alternatives