IXGH28N60D1
vs
IRG4BC40W
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
LITTELFUSE INC
|
INTERNATIONAL RECTIFIER CORP
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
FLANGE MOUNT, R-PSFM-T3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
40 A
|
40 A
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| JEDEC-95 Code |
TO-247AD
|
TO-220AB
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Matte Tin (Sn)
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Part Package Code |
|
TO-220AB
|
| Pin Count |
|
3
|
| Additional Feature |
|
LOW CONDUCTION LOSS
|
| Collector-Emitter Voltage-Max |
|
600 V
|
| Fall Time-Max (tf) |
|
110 ns
|
| Gate-Emitter Thr Voltage-Max |
|
6 V
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
160 W
|
| Transistor Application |
|
POWER CONTROL
|
| Turn-off Time-Nom (toff) |
|
294 ns
|
| Turn-on Time-Nom (ton) |
|
48 ns
|
|
|
|
Compare IXGH28N60D1 with alternatives
Compare IRG4BC40W with alternatives