IXFX26N90
vs
IXFN27N80
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Yes
Rohs Code
Yes
Yes
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
IXYS CORP
IXYS CORP
Package Description
PLUS247, 3 PIN
MINIBLOC-4
Pin Count
3
4
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
3000 mJ
Case Connection
DRAIN
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
900 V
800 V
Drain Current-Max (ID)
26 A
27 A
Drain-source On Resistance-Max
0.3 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PUFM-X4
JESD-609 Code
e1
Number of Elements
1
1
Number of Terminals
3
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
560 W
520 W
Pulsed Drain Current-Max (IDM)
104 A
108 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN SILVER COPPER
NICKEL
Terminal Form
THROUGH-HOLE
UNSPECIFIED
Terminal Position
SINGLE
UPPER
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
HTS Code
8541.29.00.95
Power Dissipation Ambient-Max
520 W
Compare IXFX26N90 with alternatives
Compare IXFN27N80 with alternatives