IXFX120N25P
vs
IXTD110N25T-8W
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
IXYS CORP
|
LITTELFUSE INC
|
| Package Description |
PLASTIC, PLUS247, 3 PIN
|
UNCASED CHIP, R-XUUC-N
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
2500 mJ
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
250 V
|
250 V
|
| Drain Current-Max (ID) |
120 A
|
110 A
|
| Drain-source On Resistance-Max |
0.024 Ω
|
0.024 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSIP-T3
|
R-XUUC-N
|
| JESD-609 Code |
e1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
UNCASED CHIP
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
700 W
|
|
| Pulsed Drain Current-Max (IDM) |
300 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
TIN SILVER COPPER
|
|
| Terminal Form |
THROUGH-HOLE
|
NO LEAD
|
| Terminal Position |
SINGLE
|
UPPER
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IXFX120N25P with alternatives
Compare IXTD110N25T-8W with alternatives