IXFT23N80Q vs APT24M80S feature comparison

IXFT23N80Q IXYS Corporation

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APT24M80S Microsemi Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer IXYS CORP MICROSEMI CORP
Part Package Code TO-268AA
Package Description TO-268, 3 PIN ROHS COMPLIANT, D3PAK-3
Pin Count 4 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 1500 mJ 975 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V 800 V
Drain Current-Max (ID) 23 A 25 A
Drain-source On Resistance-Max 0.4 Ω 0.39 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 92 A 85 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN PURE MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Transistor Application SWITCHING

Compare IXFT23N80Q with alternatives

Compare APT24M80S with alternatives