IXFT23N60Q
vs
SHD239607
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
IXYS CORP
|
SENSITRON SEMICONDUCTOR
|
| Part Package Code |
TO-268AA
|
|
| Package Description |
PLASTIC, TO-268, 3 PIN
|
CHIP CARRIER, R-XBCC-N3
|
| Pin Count |
4
|
3
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
1500 mJ
|
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
600 V
|
600 V
|
| Drain Current-Max (ID) |
23 A
|
20 A
|
| Drain-source On Resistance-Max |
0.32 Ω
|
0.35 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-268AA
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-XBCC-N3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
92 A
|
80 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
GULL WING
|
NO LEAD
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
10
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
|
|
|
Compare IXFT23N60Q with alternatives
Compare SHD239607 with alternatives