IXFT12N50F
vs
IPB65R420CFDATMA1
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
IXYS CORP
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
TO-268AA
|
D2PAK
|
| Package Description |
PLASTIC, TO-268, 3 PIN
|
GREEN, PLASTIC, TO-263, D2PAK-3
|
| Pin Count |
4
|
4
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED
|
|
| Avalanche Energy Rating (Eas) |
300 mJ
|
227 mJ
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
500 V
|
650 V
|
| Drain Current-Max (ID) |
12 A
|
8.7 A
|
| Drain-source On Resistance-Max |
0.4 Ω
|
0.42 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-268AA
|
TO-263AB
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
48 A
|
27 A
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
Infineon
|
| Moisture Sensitivity Level |
|
1
|
|
|
|
Compare IXFT12N50F with alternatives
Compare IPB65R420CFDATMA1 with alternatives