IXFT120N25T
vs
IXFV110N25TS
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
IXYS CORP
IXYS CORP
Part Package Code
TO-268AA
Package Description
PLASTIC, TO-268, 3 PIN
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
3
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
500 mJ
1000 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
250 V
250 V
Drain Current-Max (ID)
120 A
110 A
Drain-source On Resistance-Max
0.023 Ω
0.024 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-268AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
890 W
Pulsed Drain Current-Max (IDM)
300 A
300 A
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Pbfree Code
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IXFT120N25T with alternatives
Compare IXFV110N25TS with alternatives