IXFR48N60Q3
vs
IXFR48N60P
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
LITTELFUSE INC
LITTELFUSE INC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
LITTELFUSE
LITTELFUSE
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
2000 mJ
2000 mJ
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
600 V
Drain Current-Max (ID)
32 A
32 A
Drain-source On Resistance-Max
0.154 Ω
0.15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
70 pF
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
JESD-609 Code
e1
e1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
500 W
Pulsed Drain Current-Max (IDM)
120 A
110 A
Surface Mount
NO
NO
Terminal Finish
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Package Description
IN-LINE, R-PSIP-T3
Qualification Status
Not Qualified
Reference Standard
UL RECOGNIZED
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