IXFN32N120P
vs
IXFN32N120
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
IXYS CORP
|
IXYS CORP
|
| Package Description |
MINIBLOC-4
|
MINIBLOC-4
|
| Pin Count |
4
|
4
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
| Avalanche Energy Rating (Eas) |
2000 mJ
|
4000 mJ
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
1200 V
|
1200 V
|
| Drain Current-Max (ID) |
32 A
|
32 A
|
| Drain-source On Resistance-Max |
0.31 Ω
|
0.35 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PUFM-X4
|
R-PUFM-X4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1000 W
|
|
| Pulsed Drain Current-Max (IDM) |
100 A
|
128 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Reference Standard |
UL RECOGNIZED
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
NICKEL
|
NICKEL
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
|
|
|
Compare IXFN32N120P with alternatives
Compare IXFN32N120 with alternatives