IXFN130N30 vs IXFN160N30T feature comparison

IXFN130N30 IXYS Corporation

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IXFN160N30T IXYS Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer IXYS CORP IXYS CORP
Package Description FLANGE MOUNT, R-PUFM-X4 PLASTIC, MINIBLOC-4
Pin Count 4 4
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Rating (Eas) 4000 mJ 3000 mJ
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V 300 V
Drain Current-Max (ID) 130 A 130 A
Drain-source On Resistance-Max 0.022 Ω 0.019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4 R-PUFM-X4
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 700 W 900 W
Pulsed Drain Current-Max (IDM) 520 A 440 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish NICKEL Nickel (Ni)
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Reference Standard UL RECOGNIZED

Compare IXFN130N30 with alternatives

Compare IXFN160N30T with alternatives