IXFH68N20
vs
IPB80N06S2LH5ATMA1
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
IXYS CORP
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
55 V
Drain Current-Max (ID)
68 A
80 A
Drain-source On Resistance-Max
0.035 Ω
0.0062 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AD
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
200 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
360 W
Pulsed Drain Current-Max (IDM)
272 A
320 A
Qualification Status
Not Qualified
Surface Mount
NO
YES
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Package Description
GREEN, PLASTIC, TO-263, 3 PIN
Samacsys Manufacturer
Infineon
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
700 mJ
Compare IXFH68N20 with alternatives
Compare IPB80N06S2LH5ATMA1 with alternatives