IXFH30N50S
vs
SIHG32N50D-E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
End Of Life
Ihs Manufacturer
IXYS CORP
VISHAY SILICONIX
Package Description
FLANGE MOUNT, R-PSFM-G2
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Category CO2 Kg
8.8
8.8
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
30 A
30 A
Drain-source On Resistance-Max
0.16 Ω
0.15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSFM-G2
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
360 W
Pulsed Drain Current-Max (IDM)
120 A
89 A
Qualification Status
Not Qualified
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
EU RoHS Version
RoHS 2 (2015/863/EU)
Candidate List Date
2015-06-15
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.31
Avalanche Energy Rating (Eas)
225 mJ
JEDEC-95 Code
TO-247AC
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IXFH30N50S with alternatives
Compare SIHG32N50D-E3 with alternatives