ISL9N312AS3ST
vs
SPP80N03S2L-05
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
INFINEON TECHNOLOGIES AG
Reach Compliance Code
unknown
compliant
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
58 A
80 A
Drain-source On Resistance-Max
0.012 Ω
0.0075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
TO-220AB
JESD-30 Code
R-PSSO-G2
R-PSFM-T3
Moisture Sensitivity Level
NOT SPECIFIED
Number of Elements
1
1
Number of Terminals
2
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
YES
NO
Terminal Finish
NOT SPECIFIED
MATTE TIN
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Rohs Code
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
325 mJ
JESD-609 Code
e3
Operating Temperature-Max
175 °C
Power Dissipation-Max (Abs)
154 W
Pulsed Drain Current-Max (IDM)
320 A
Compare ISL9N312AS3ST with alternatives
Compare SPP80N03S2L-05 with alternatives