IS64WV51216EEBLL-10CT4LA3
vs
IS61WV51216EEBLL-10B2I
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INTEGRATED SILICON SOLUTION INC
|
INTEGRATED SILICON SOLUTION INC
|
Package Description |
TSOP2,
|
TFBGA,
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Date Of Intro |
2017-01-19
|
2017-01-19
|
Access Time-Max |
10 ns
|
10 ns
|
JESD-30 Code |
R-PDSO-G54
|
R-PBGA-B48
|
Length |
22.22 mm
|
8 mm
|
Memory Density |
8388608 bit
|
8388608 bit
|
Memory IC Type |
STANDARD SRAM
|
STANDARD SRAM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Terminals |
54
|
48
|
Number of Words |
524288 words
|
524288 words
|
Number of Words Code |
512000
|
512000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
125 °C
|
85 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
512KX16
|
512KX16
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TSOP2
|
TFBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE, THIN PROFILE
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Seated Height-Max |
1.2 mm
|
1.2 mm
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
2.4 V
|
2.4 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
AUTOMOTIVE
|
INDUSTRIAL
|
Terminal Form |
GULL WING
|
BALL
|
Terminal Pitch |
0.8 mm
|
0.75 mm
|
Terminal Position |
DUAL
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Width |
10.16 mm
|
6 mm
|
Base Number Matches |
1
|
1
|
JESD-609 Code |
|
e0
|
Package Equivalence Code |
|
BGA48,6X8,30
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare IS64WV51216EEBLL-10CT4LA3 with alternatives
Compare IS61WV51216EEBLL-10B2I with alternatives