IS61QDB24M18A-250B3 vs K7R641882M-FC25T feature comparison

IS61QDB24M18A-250B3 Integrated Silicon Solution Inc

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K7R641882M-FC25T Samsung Semiconductor

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC SAMSUNG SEMICONDUCTOR INC
Package Description 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165 BGA, BGA165,11X15,40
Reach Compliance Code compliant unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Clock Frequency-Max (fCLK) 250 MHz 250 MHz
I/O Type SEPARATE SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
Length 15 mm
Memory Density 75497472 bit 75497472 bit
Memory IC Type QDR SRAM STANDARD SRAM
Memory Width 18 18
Number of Functions 1
Number of Terminals 165 165
Number of Words 4194304 words 4194304 words
Number of Words Code 4000000 4000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 4MX18 4MX18
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TBGA BGA
Package Equivalence Code BGA165,11X15,40 BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE GRID ARRAY
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm
Standby Voltage-Min 1.7 V 1.7 V
Supply Current-Max 0.95 mA
Supply Voltage-Max (Vsup) 1.89 V
Supply Voltage-Min (Vsup) 1.71 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Width 13 mm
Base Number Matches 1 1
Pbfree Code No
JESD-609 Code e1
Moisture Sensitivity Level 3
Terminal Finish TIN SILVER COPPER

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