IS61QDB22M18A-250B3 vs IS61QDB22M18C-250B4LI feature comparison

IS61QDB22M18A-250B3 Integrated Silicon Solution Inc

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IS61QDB22M18C-250B4LI Integrated Silicon Solution Inc

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Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC INTEGRATED SILICON SOLUTION INC
Package Description 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165 LBGA,
Reach Compliance Code compliant unknown
ECCN Code 3A991.B.2.A 3A991.B.2.A
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 0.45 ns 0.45 ns
Clock Frequency-Max (fCLK) 250 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165 R-PBGA-B165
Length 15 mm 15 mm
Memory Density 37748736 bit 37748736 bit
Memory IC Type QDR SRAM QDR SRAM
Memory Width 18 18
Number of Functions 1 1
Number of Terminals 165 165
Number of Words 2097152 words 2097152 words
Number of Words Code 2000000 2000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -40 °C
Organization 2MX18 2MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TBGA LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified
Seated Height-Max 1.2 mm 1.4 mm
Standby Current-Max 0.27 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.95 mA
Supply Voltage-Max (Vsup) 1.89 V 1.89 V
Supply Voltage-Min (Vsup) 1.71 V 1.71 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Width 13 mm 13 mm
Base Number Matches 1 1
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

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