IS61DDP2B22M36A-400M3L
vs
IS61DDPB22M36A-400B4L
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INTEGRATED SILICON SOLUTION INC
|
INTEGRATED SILICON SOLUTION INC
|
Part Package Code |
BGA
|
BGA
|
Package Description |
LBGA,
|
LBGA,
|
Pin Count |
165
|
165
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
3A991.B.2.A
|
3A991.B.2.A
|
HTS Code |
8542.32.00.41
|
8542.32.00.41
|
Factory Lead Time |
30 Weeks
|
|
Access Time-Max |
0.45 ns
|
0.45 ns
|
Additional Feature |
PIPELINED ARCHITECTURE
|
PIPELINED ARCHITECTURE
|
JESD-30 Code |
R-PBGA-B165
|
R-PBGA-B165
|
Length |
17 mm
|
15 mm
|
Memory Density |
75497472 bit
|
75497472 bit
|
Memory IC Type |
DDR SRAM
|
DDR SRAM
|
Memory Width |
36
|
36
|
Number of Functions |
1
|
1
|
Number of Terminals |
165
|
165
|
Number of Words |
2097152 words
|
2097152 words
|
Number of Words Code |
2000000
|
2000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
70 °C
|
70 °C
|
Operating Temperature-Min |
|
|
Organization |
2MX36
|
2MX36
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
LBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
Seated Height-Max |
1.4 mm
|
1.4 mm
|
Supply Voltage-Max (Vsup) |
1.89 V
|
1.89 V
|
Supply Voltage-Min (Vsup) |
1.71 V
|
1.71 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Width |
15 mm
|
13 mm
|
Base Number Matches |
1
|
1
|
Moisture Sensitivity Level |
|
3
|
|
|
|
Compare IS61DDP2B22M36A-400M3L with alternatives
Compare IS61DDPB22M36A-400B4L with alternatives