IS46DR86400E-25DBLA1 vs K4T51083QQ-BCF70 feature comparison

IS46DR86400E-25DBLA1 Integrated Silicon Solution Inc

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K4T51083QQ-BCF70 Samsung Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC SAMSUNG SEMICONDUCTOR INC
Package Description TFBGA, VFBGA,
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Date Of Intro 2017-06-23
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.4 ns 0.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60 R-PBGA-B60
Length 10.5 mm 9.5 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 8 8
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 60 60
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 64MX8 64MX8
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 1.2 mm 1 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 8 mm 7.5 mm
Base Number Matches 1 1
Rohs Code Yes
JESD-609 Code e1
Terminal Finish TIN SILVER COPPER

Compare IS46DR86400E-25DBLA1 with alternatives

Compare K4T51083QQ-BCF70 with alternatives