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IS43DR16640BL-3DBL vs K4T1G164QQ-HIE60 feature comparison

IS43DR16640BL-3DBL Integrated Silicon Solution Inc

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K4T1G164QQ-HIE60 Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC SAMSUNG SEMICONDUCTOR INC
Package Description TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.32 8542.32.00.32
Access Mode MULTI BANK PAGE BURST MULTI BANK PAGE BURST
Access Time-Max 0.45 ns 0.45 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 333 MHz 333 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B84
Length 12.5 mm 13 mm
Memory Density 1073741824 bit 1073741824 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 67108864 words 67108864 words
Number of Words Code 64000000 64000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 95 °C
Operating Temperature-Min -40 °C
Organization 64MX16 64MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA84,9X15,32 BGA84,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 4,8 4,8
Standby Current-Max 0.015 A 0.015 A
Supply Current-Max 0.25 mA 0.245 mA
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm 9 mm
Base Number Matches 1 1
Part Package Code BGA
Pin Count 84
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Memory » DRAMs
Memory » DRAMs

Compare IS43DR16640BL-3DBL with alternatives

Compare K4T1G164QQ-HIE60 with alternatives