IS43DR16640-3DBI
vs
K4T1G164QD-ZCE60
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
INTEGRATED SILICON SOLUTION INC
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code |
DSBGA
|
BGA
|
Package Description |
TFBGA, BGA84,9X15,32
|
TFBGA, BGA84,9X15,32
|
Pin Count |
84
|
84
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.32
|
8542.32.00.32
|
Access Mode |
MULTI BANK PAGE BURST
|
MULTI BANK PAGE BURST
|
Access Time-Max |
0.45 ns
|
0.45 ns
|
Additional Feature |
AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
Clock Frequency-Max (fCLK) |
333 MHz
|
333 MHz
|
I/O Type |
COMMON
|
COMMON
|
Interleaved Burst Length |
4,8
|
4,8
|
JESD-30 Code |
R-PBGA-B84
|
R-PBGA-B84
|
JESD-609 Code |
e0
|
|
Length |
13.65 mm
|
13 mm
|
Memory Density |
1073741824 bit
|
1073741824 bit
|
Memory IC Type |
DDR2 DRAM
|
DDR2 DRAM
|
Memory Width |
16
|
16
|
Number of Functions |
1
|
1
|
Number of Ports |
1
|
1
|
Number of Terminals |
84
|
84
|
Number of Words |
67108864 words
|
67108864 words
|
Number of Words Code |
64000000
|
64000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
95 °C
|
Operating Temperature-Min |
-40 °C
|
|
Organization |
64MX16
|
64MX16
|
Output Characteristics |
3-STATE
|
3-STATE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TFBGA
|
TFBGA
|
Package Equivalence Code |
BGA84,9X15,32
|
BGA84,9X15,32
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
GRID ARRAY, THIN PROFILE, FINE PITCH
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Refresh Cycles |
8192
|
8192
|
Seated Height-Max |
1.2 mm
|
1.2 mm
|
Self Refresh |
YES
|
YES
|
Sequential Burst Length |
4,8
|
4,8
|
Standby Current-Max |
0.015 A
|
0.015 A
|
Supply Current-Max |
0.35 mA
|
0.255 mA
|
Supply Voltage-Max (Vsup) |
1.9 V
|
1.9 V
|
Supply Voltage-Min (Vsup) |
1.7 V
|
1.7 V
|
Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
OTHER
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
0.8 mm
|
0.8 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Width |
8 mm
|
9 mm
|
Base Number Matches |
1
|
1
|
|
|
|
Compare IS43DR16640-3DBI with alternatives
Compare K4T1G164QD-ZCE60 with alternatives