IS43DR16320E-25DBL
vs
M14D5121632A-2.5BBG2A
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Active
Contact Manufacturer
Ihs Manufacturer
INTEGRATED SILICON SOLUTION INC
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description
TFBGA,
VFBGA,
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.28
8542.32.00.28
Factory Lead Time
10 Weeks
Samacsys Manufacturer
Integrated Silicon Solution Inc.
Access Mode
FOUR BANK PAGE BURST
FOUR BANK PAGE BURST
Access Time-Max
0.4 ns
0.4 ns
Additional Feature
AUTO/SELF REFRESH
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B84
R-PBGA-B84
Length
10.5 mm
12.5 mm
Memory Density
536870912 bit
536870912 bit
Memory IC Type
DDR2 DRAM
DDR DRAM
Memory Width
16
16
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
84
84
Number of Words
33554432 words
33554432 words
Number of Words Code
32000000
32000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
Organization
32MX16
32MX16
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
VFBGA
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Seated Height-Max
1.2 mm
1 mm
Self Refresh
YES
YES
Supply Voltage-Max (Vsup)
1.9 V
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
1.8 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
OTHER
OTHER
Terminal Form
BALL
BALL
Terminal Pitch
0.8 mm
0.8 mm
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Width
8 mm
8 mm
Base Number Matches
1
1
Compare IS43DR16320E-25DBL with alternatives
Compare M14D5121632A-2.5BBG2A with alternatives