IS43DR16320E-25DBL vs M14D5121632A-2.5BBG2A feature comparison

IS43DR16320E-25DBL Integrated Silicon Solution Inc

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M14D5121632A-2.5BBG2A Elite Semiconductor Memory Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
Package Description TFBGA, VFBGA,
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.28 8542.32.00.28
Factory Lead Time 10 Weeks
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.4 ns 0.4 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B84 R-PBGA-B84
Length 10.5 mm 12.5 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type DDR2 DRAM DDR DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min
Organization 32MX16 32MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA VFBGA
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Seated Height-Max 1.2 mm 1 mm
Self Refresh YES YES
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Width 8 mm 8 mm
Base Number Matches 1 1

Compare IS43DR16320E-25DBL with alternatives

Compare M14D5121632A-2.5BBG2A with alternatives