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IS43DR16160A-25EBL vs K4N56163QI-ZC200 feature comparison

IS43DR16160A-25EBL Integrated Silicon Solution Inc

Buy Now Datasheet

K4N56163QI-ZC200 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description TFBGA, BGA84,9X15,32 TFBGA, BGA84,9X15,32
Pin Count 84 84
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.24 8542.32.00.24
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 0.4 ns 0.35 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 400 MHz 500 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 4,8 4,8
JESD-30 Code R-PBGA-B84 R-PBGA-B84
JESD-609 Code e1 e1
Length 12.5 mm 13 mm
Memory Density 268435456 bit 268435456 bit
Memory IC Type DDR2 DRAM DDR2 DRAM
Memory Width 16 16
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 84 84
Number of Words 16777216 words 16777216 words
Number of Words Code 16000000 16000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 85 °C 95 °C
Operating Temperature-Min
Organization 16MX16 16MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA84,9X15,32 BGA84,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192 8192
Seated Height-Max 1.2 mm 1.2 mm
Self Refresh YES YES
Sequential Burst Length 4,8 4,8
Standby Current-Max 0.005 A 0.01 A
Supply Current-Max 0.385 mA 0.29 mA
Supply Voltage-Max (Vsup) 1.9 V 1.9 V
Supply Voltage-Min (Vsup) 1.7 V 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V 1.8 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade OTHER OTHER
Terminal Finish TIN SILVER COPPER TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Width 8 mm 9 mm
Base Number Matches 4 1
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Memory » DRAMs
Memory » DRAMs

Compare IS43DR16160A-25EBL with alternatives

Compare K4N56163QI-ZC200 with alternatives